Si1-xGex/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing
Author:
Affiliation:
1. University of Warwick, Gibbet Hill Road, CV4 7AL, Coventry, UK
2. , IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
Publisher
American Chemical Society (ACS)
Subject
Spectroscopy,Structural Biology
Link
http://link.springer.com/content/pdf/10.1007/s13361-016-1439-4.pdf
Reference26 articles.
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2. International Technology Roadmap for Semiconductors (2013). http://www.itrs2.net/
3. Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1–xGex/Ge Quantum Well Structures
4. Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions
5. Depth profiling of shallow arsenic implants in silicon using SIMS
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