Depth profiling of shallow arsenic implants in silicon using SIMS
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Nanometre structures in semiconductors formed by low energy ion implantation
2. Empirical Modeling of Low Energy Boron Implants in Silicon
3. Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide
4. Proceedings of the 7th Int. Vacuum Congress and 3rd Int. Conf on Solid Surfaces ed. by R. Dobrozemsky et al Vol. II. p. 1417, Vienna (1977).
5. Recoil mixing in solids by energetic ion beams
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