Ultra-high hole mobility exceeding one million in a strained germanium quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4763476
Reference22 articles.
1. High-mobility Si and Ge structures
2. Scattering mechanisms in high-mobility strained Ge channels
3. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
4. High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition
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