Metal penetration and dopant redistribution beneath alloyed Ohmic contacts to n‐GaAs-Reference-Cited by-同舟云学术

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Metal penetration and dopant redistribution beneath alloyed Ohmic contacts to n‐GaAs

Published:1987-07 Issue:4 Volume:5 Page:1503-1507
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Shappirio J. R.,Lareau R. T.,Lux R. A.,Finnegan J. J.,Smith D. D.,Heath L. S.,Taysing‐Lara M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574590

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure;The European Physical Journal Applied Physics;2020-02

2. Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications;IEEE Transactions on Electron Devices;2018-02

3. Silver Diffusion in Organic Optoelectronic Devices: Deposition-Related Processes versus Secondary Ion Mass Spectrometry Analysis Artifacts;The Journal of Physical Chemistry C;2015-10-05

4. Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs;Materials Science in Semiconductor Processing;2015-02

5. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures;Semiconductor Science and Technology;2013-01-03

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