Ultra high hole mobilities in a pure strained Ge quantum well-Reference-Cited by-同舟云学术

Ultra high hole mobilities in a pure strained Ge quantum well

Published:2014-04 Issue: Volume:557 Page:329-333
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mironov O.A.,Hassan A.H.A.,Morris R.J.H.,Dobbie A.,Uhlarz M.,Chrastina D.^ORCID,Hague J.P.,Kiatgamolchai S.,Beanland R.,Gabani S.,Berkutov I.B.,Helm M.,Drachenko O.,Myronov M.,Leadley D.R.

Funder

EPSRC UK Renaissance Germanium project

EuroMagNET

Slovak Research and Development Agency

SAS Centre of Excellence CFNT MVEP

National Scholarship Program of the Slovak Republic for the Mobility Support for Researchers in the Academic Year 2012/2013

DFG

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Ultra-high hole mobility exceeding one million in a strained germanium quantum well

2. Compressive strain dependence of hole mobility in strained Ge channels

3. Scattering mechanisms in high-mobility strained Ge channels

4. 2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

5. High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform

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