Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates-Reference-Cited by-同舟云学术

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Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates

Published:2020-10 Issue: Volume:117 Page:105153
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wagatsuma Youya,Alam Md Mahfuz,Okada Kazuya,Hoshi Yusuke,Yamada Michihiro,Hamaya Kohei,Sawano Kentarou

Funder

MEXT

Research Foundation

Grant-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

2. Germanium CMOS potential from material and process perspectives: Be more positive about germanium

3. Ultra high hole mobilities in a pure strained Ge quantum well

4. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method;Materials Science in Semiconductor Processing;2024-07

2. Crystallographic Orientations of Cracks Formed in SiGe/Ge/Si(111);Microscopy and Microanalysis;2024-07

3. Local strain distribution analysis in strained SiGe spintronics devices;Japanese Journal of Applied Physics;2024-01-23

4. Experimental determination of critical thickness limitations of (010) β -(AlxGa1−x)2O3 heteroepitaxial films;Applied Physics Letters;2023-11-27

5. Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition;Journal of Vacuum Science & Technology A;2023-06-26

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