Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Author:
Affiliation:
1. Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, United States
Funder
Center for Nanoscale Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b00910
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1. GaN based nanorods for solid state lighting
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