Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

Published:2012-07-16 Issue:3 Volume:101 Page:032103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Shunfeng,Wang Xue,Fündling Sönke,Erenburg Milena,Ledig Johannes,Wei Jiandong,Wehmann Hergo H.,Waag Andreas,Bergbauer Werner,Mandl Martin,Strassburg Martin,Trampert Achim,Jahn Uwe,Riechert Henning,Jönen Holger,Hangleiter Andreas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4737395

Reference24 articles.

1. GaN based nanorods for solid state lighting

2. The Controlled Growth of GaN Nanowires

3. Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

4. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

5. Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells;Nanoscale Research Letters;2021-09-16

2. Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks;The European Physical Journal Applied Physics;2021-03

4. Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies;Electronics;2020-11-13

5. High-performance solar vapor generation of Ni/carbon nanomaterials by controlled carbonization of waste polypropylene;Science China Materials;2020-02-28