Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells-Reference-Cited by-同舟云学术

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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Published:2010-07-06 Issue:30 Volume:21 Page:305201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Bergbauer W,Strassburg M,Kölper Ch,Linder N,Roder C,Lähnemann J,Trampert A,Fündling S,Li S F,Wehmann H-H,Waag A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=30/a=305201/pdf

Reference20 articles.

1. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

2. Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics

3. InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

4. High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays

5. Axial and radial growth of Ni-induced GaN nanowires

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3. Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes;Nano Letters;2023-02-07

4. Complications in silane-assisted GaN nanowire growth;Nanoscale Advances;2023

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