Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods
Author:
Affiliation:
1. Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig, Germany
2. Osram Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg101537m
Reference27 articles.
1. The Controlled Growth of GaN Nanowires
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