Growth Mechanism of Exfoliable GaN by van der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Growth Mechanism of Exfoliable GaN by van der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

Published:2023-02-27 Issue:4 Volume:23 Page:2196-2202
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Xu Liyue¹²^ORCID,Xu Yu³⁴^ORCID,Qu Yipu³^ORCID,Cao Bing¹²,Wang Chinhua¹²^ORCID,Xu Ke³⁴

Affiliation:

1. School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, PR China

2. Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, PR China

3. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy, Sciences (CAS), Suzhou 215123, PR China

4. Suzhou Nanowin Science and Technology Co Ltd., Suzhou 215123, PR China

Funder

Jiangsu Provincial Key Research and Development Program

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01213

Reference34 articles.

1. Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

2. Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition

3. Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy

4. Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

5. Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE

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