Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Published:2023-12-07 Issue:1 Volume:24 Page:331-338
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Wang Shuai¹^ORCID,Xu Jianxi¹,Wang Yuning¹^ORCID,Su Xujun¹,Zheng Yanqing²,Bao Ningzhong³^ORCID,Xu Ke¹

Affiliation:

1. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy Sciences (CAS), Suzhou, Jiangsu 215123, P. R. China

2. College of Material Science and Chemical Engineering, Ningbo University, Ningbo, Zhejiang 315211, P. R. China

3. State Key Laboratory of Material-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, Jiangsu 210009, P. R. China

Funder

Jiangsu Provincial Key Research and Development Program

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01042

Reference44 articles.

1. The growth behaviors and high controllability of GaN nanostructures on stripe-patterned sapphire substrates

2. Optical properties evolution of GaN film grown via lateral epitaxial overgrowth

3. Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

4. Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

5. Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates