Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape-Reference-Cited by-同舟云学术

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Published:2021 Issue:7 Volume:9 Page:2243-2251
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shervin Shahab¹²³⁴⁵,Moradnia Mina¹²³⁴⁶,Alam Md Kamrul⁷²³⁴,Tong Tain⁷²³⁴,Ji Mi-Hee⁸⁹¹⁰¹¹⁴,Chen Jie¹²³⁴⁵,Pouladi Sara⁵²³⁴⁶,Detchprohm Theeradetch⁸⁹¹⁰¹¹⁴,Forrest Rebecca¹²²³⁴,Bao Jiming⁷²³⁴,Dupuis Russell D.⁸⁹¹⁰¹¹⁴,Ryou Jae-Hyun¹²³⁴⁵^ORCID

Affiliation:

1. Department of Mechanical Engineering

2. University of Houston

3. Houston

4. USA

5. Materials Science and Engineering Program

6. Texas Center for Superconductivity at UH (TcSUH) and Advanced Manufacturing Institute (AMI)

7. Department of Electrical and Computer Engineering

8. Center for Compound Semiconductors

9. School of Electrical and Computer Engineering

10. Georgia Institute of Technology

11. Atlanta

12. Department of Physics

Abstract

Demonstration of a mechanically flexible single-crystalline GaN substrate by direct epitaxial growth on metal foil with significantly reduced processing costs and versatile functionality on flexible electronics and photonics.

Funder

King Abdullah University of Science and Technology

Division of Industrial Innovation and Partnerships

Division of Electrical, Communications and Cyber Systems

University of Houston

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04634E

Reference51 articles.