Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120698
Reference13 articles.
1. GaN growth on sapphire
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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