Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE-Reference-Cited by-同舟云学术

Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE

Published:2001-07 Issue: Volume:227-228 Page:431-436
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yodo T,Ando H,Tsuchiya H,Nosei D,Shimeno M,Harada Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source

2. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

3. Properties of cubic GaN grown by MBE

4. Novel metalorganic chemical vapor deposition system for GaN growth

5. Growth and characterizations of GaN on SiC substrates with buffer layers

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