Growth and characterizations of GaN on SiC substrates with buffer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366048
Reference18 articles.
1. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition
4. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications;Nanoscale Advances;2023
2. Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template;Thin Solid Films;2018-03
3. Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate;Journal of Crystal Growth;2014-06
4. Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane;Japanese Journal of Applied Physics;2007-01-09
5. Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer;Journal of Crystal Growth;2004-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3