Formation of GaN thin film on silicon substrate by gallium oxide ammoniation
Author:
Funder
Anna University
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
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3. Growth behavior of GaN nanoneedles with changing HCl/NH3 flow ratio;Moon;Mater. Lett.,2009
4. High-quality uniaxial InxGa1–xN/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication;Ra;ACS Appl. Mater. Interfaces,2013
5. Silicon—a new substrate for GaN growth;Pal;Bull. Mater. Sci.,2004
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