Growth behavior of GaN nanoneedles with changing HCl/NH3 flow ratio-Reference-Cited by-同舟云学术

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Growth behavior of GaN nanoneedles with changing HCl/NH3 flow ratio

Published:2009-12 Issue:30 Volume:63 Page:2695-2697
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Moon J.Y.,Kwon H.Y.,Shin M.J.,Choi Y.J.,Ahn H.S.,Chang J.H.,Yi S.N.,Yun Y.J.,Ha D.H.,Park S.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures

2. Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

3. Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

4. Surface roughness and strain effects on ZnO nanorod growth

5. Three-dimensional dendrite-like nanostructures of gallium nitride

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1. Formation of GaN thin film on silicon substrate by gallium oxide ammoniation;Optik;2018-10

2. Fabrication and UV photoresponse of GaN nanowire-film hybrid films on sapphire substrates by chemical vapor deposition method;Materials Letters;2018-04

3. Synthesis and excellent field emission properties of three-dimensional branched GaN nanowire homostructures;Applied Physics Letters;2016-10-10

4. Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy;Journal of the Korean Physical Society;2016-09

5. Gallium nitride nanoneedles grown in extremely non-equilibrium nitrogen plasma;AIP Conference Proceedings;2016

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