Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
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1. Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties;Journal of Alloys and Compounds;2024-05
2. Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy;Journal of the Korean Physical Society;2016-09
3. Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates;Journal of Electronic Materials;2015-03-06
4. A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers;J. Mater. Chem. C;2014
5. Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates;Journal of Materials Chemistry C;2013
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