A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers-Reference-Cited by-同舟云学术

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

Published:2014 Issue:21 Volume:2 Page:4112-4116
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Wenliang¹²³,Lin Yunhao¹²³,Yang Weijia¹²³,Liu Zuolian¹²³,Zhiou Shizhong¹²³,Qian Huirong¹²³,Gao Fangliang¹²³,Wen Lei¹²³,Li Guoqiang¹²³⁴²

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510641, China

4. Department of Electronic Materials

Abstract

High-quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers have been deposited on LiGaO₂(100) substrates by a combination of pulsed laser deposition and molecular beam epitaxy technologies.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00192C

Reference42 articles.

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5. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

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