GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures-Reference-Cited by-同舟云学术

GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

Published:2016-04-06 Issue:5 Volume:16 Page:2509-2513
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Avit Geoffrey¹²,André Yamina¹²,Bougerol Catherine³⁴,Castelluci Dominique¹²,Dussaigne Amélie³⁵,Ferret Pierre³⁵,Gaugiran Stéphanie³⁵,Gayral Bruno³⁶,Gil Evelyne¹²,Lee Yann³⁵,Ramdani M. Reda¹²,Roche Elissa¹²,Trassoudaine Agnès¹²⁷

Affiliation:

1. Université Clermont Auvergne, Université Blaise Pascal, Institut Pascal, BP 10448, F-63000 Clermont-Ferrand, France

2. CNRS, UMR6602, Institut Pascal, F-63178 Aubière, France

3. Universite Grenoble Alpes, F-38000 Grenoble, France

4. CNRS, Institut Néel, F-38042 Grenoble, France

5. CEA LETI, Minatec campus, 17 rue des martyrs, F-38054 Grenoble cedex 9, France

6. CEA-INAC PHELIQS, CEA-CNRS group Nanophysique et Semiconducteurs, F-38000 Grenoble, France

7. Institut Universitaire de Technologie, Departmart Mesures Physiques, Université d’Auvergne, 63172 Aubière cedex, France

Funder

Agence Nationale de la Recherche

Région Auvergne

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b01244

Reference34 articles.

1. GaN based nanorods for solid state lighting

2. Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

3. M-Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission

4. M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

5. The Role of Si during the Growth of GaN Micro- and Nanorods

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