M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices-Reference-Cited by-同舟云学术

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

Published:2011-10-11 Issue:11 Volume:11 Page:4839-4845
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Koester Robert¹,Hwang Jun-Seok²,Salomon Damien¹³,Chen Xiaojun¹,Bougerol Catherine²,Barnes Jean-Paul³,Dang Daniel Le Si²,Rigutti Lorenzo⁴,de Luna Bugallo Andres⁴,Jacopin Gwénolé⁴,Tchernycheva Maria⁴,Durand Christophe¹,Eymery Joël¹

Affiliation:

1. CEA-CNRS-UJF group, Nanophysique et Semi-conducteurs, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, F-38054, France

2. CEA-CNRS-UJF group, Nanophysique des semi-conducteurs, Institut Néel-CNRS/Université J. Fourier, 25 avenue des Martyrs, BP 166 38042 Grenoble cedex 9, France

3. CEA-Leti, Minatec-Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

4. Institut d'Electronique Fondamentale UMR CNRS 8622, Université Paris Sud 11, 91405 Orsay Cedex, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202686n

Reference34 articles.

1. Nanowire electronic and optoelectronic devices

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3. Nanowire photonics

4. Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

5. Nanowire photonics

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