Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging-Reference-Cited by-同舟云学术

Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging

Published:2018-08-03 Issue:36 Volume:10 Page:30794-30802
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kavrik Mahmut S.¹^ORCID,Thomson Emily¹,Chagarov Evgueni¹,Tang Kechao²^ORCID,Ueda Scott T.¹,Hou Vincent³,Aoki Toshihiro⁴,Kim Moon⁵,Fruhberger Bernd¹,Taur Yuan¹,McIntyre Paul C.²,Kummel Andrew C.¹^ORCID

Affiliation:

1. Materials Science and Engineering, University of California San Diego, La Jolla, California 92093, United States

2. Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

3. Taiwan Semiconductor Manufacturing Corporation (TSMC), Hsinchu 300-78, Taiwan

4. Irvine Materials Research Institute, University of California Irvine, Irvine, California 92697, United States

5. Material Science and Engineering, University of Texas, Dallas, Texas 75080-3021, United States

Funder

Taiwan Semiconductor Manufacturing Company

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b06547

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4. High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment

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