A kinetic model for the oxidation of silicon germanium alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2060927
Reference30 articles.
1. Oxidation studies of SiGe
2. Wet oxidation of GeSi strained layers by rapid thermal processing
3. Gate oxide prepared by nanometre silicon wet oxidation at low temperature for Si/SiGe PMOSFET application
4. Nature of interfaces and oxidation processes in Ge+‐implanted Si
5. Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics
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