A Three-Step Atomic Layer Deposition Process for SiNx Using Si2Cl6, CH3NH2, and N2 Plasma
Author:
Affiliation:
1. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, Colorado 80401, United States
2. Lam Research Corporation, 11155 SW Leveton Drive, Tualatin, Oregon 97062, United States
Funder
LAM Foundation
Lam Research Corporation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b01392
Reference55 articles.
1. Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks
2. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects
3. Effect of Plasma Treatments on the Interface Chemistry and Adhesion Strength Between Cu Metallization and SiCN Etch Stop Layer
4. Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
5. Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
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