Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
Author:
Affiliation:
1. Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland
2. Lam Research Corporation, 11155 SW Leveton Drive, Tualatin, Oregon 97062-8094, United States
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am5021167
Reference17 articles.
1. Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
2. Triyoso, D. H.; Jaschke, V.; Shu, J.; Mutas, S.; Hempel, K.; Schaeffer, J. K.; Lenski, M.InRobust PEALD SiN spacer for gate first high-k metal gate integration, IC Design & Technology (ICICDT), 2012 IEEE International Conference on, May 30 2012-June 1 2012; 2012; pp1–4.
3. ALD of SiO[sub 2] at Room Temperature Using TEOS and H[sub 2]O with NH[sub 3] as the Catalyst
4. A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide
5. Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism
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