Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference48 articles.
1. M. Belyansky, R. Conti, S. Khan, X. Zhou, N. R. Klymko, Y. Yao, A. Madan, L. Tai, P. Flaitz, T. Ando, in: F. Roozeboom, K. Kakushima, E. P. Gusev, O. M. Leonte, V. Narayanan, P. J. Timans, and P. A. Kohl (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4, ECS, Toronto, Canada, 2014, Vol. 61, p. 39.
2. Challenges in spacer process development for leading-edge high-k metal gate technology;Koehler;Phys. Status Solidi C,2014
3. Atomic layer deposition of SiN for spacer applications in high-end logic devices;Koehler;IOP Conf. Ser.: Mater. Sci. Eng.,2012
4. Evaluation of low temperature silicon nitride spacer for high-k metal gate integration, ECS J. Solid State;Triyoso;Sci. Technol.,2013
5. FinFET with encased air-gap spacers for high-performance and low-energy circuits;Sachid;IEEE Electron Device Lett.,2016