Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference48 articles.
1. M. Belyansky, R. Conti, S. Khan, X. Zhou, N. R. Klymko, Y. Yao, A. Madan, L. Tai, P. Flaitz, T. Ando, in: F. Roozeboom, K. Kakushima, E. P. Gusev, O. M. Leonte, V. Narayanan, P. J. Timans, and P. A. Kohl (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4, ECS, Toronto, Canada, 2014, Vol. 61, p. 39.
2. Challenges in spacer process development for leading-edge high-k metal gate technology;Koehler;Phys. Status Solidi C,2014
3. Atomic layer deposition of SiN for spacer applications in high-end logic devices;Koehler;IOP Conf. Ser.: Mater. Sci. Eng.,2012
4. Evaluation of low temperature silicon nitride spacer for high-k metal gate integration, ECS J. Solid State;Triyoso;Sci. Technol.,2013
5. FinFET with encased air-gap spacers for high-performance and low-energy circuits;Sachid;IEEE Electron Device Lett.,2016
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献