Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper-Reference-Cited by-同舟云学术

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Published:2018-11-28 Issue:51 Volume:10 Page:44825-44833
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Harrison Sejoon¹^ORCID,Meng Xin²^ORCID,Kim Si Joon³^ORCID,Lucero Antonio T.¹,Cheng Lanxia¹^ORCID,Byun Young-Chul¹,Lee Joy S.¹,Hwang Su Min¹,Kondusamy Aswin L. N.¹,Wallace Robert M.¹^ORCID,Goodman Gary⁴,Wan Alan S.⁴,Telgenhoff Michael⁵,Hwang Byung Keun⁵,Kim Jiyoung¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States

2. Department of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States

3. Department of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon-si, Gangwon-do 24341, Republic of Korea

4. Evans Analytical Group, 104 Windsor Center Drive, East Windsor, New Jersey 08520, United States

5. Dow Chemical, 2200 West Salzburg Road, Midland, Michigan 48686, United States

Funder

National Research Foundation of Korea

Dow Chemical Company

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b15291

Reference70 articles.