Engineering High-k/SiGe Interface with ALD Oxide for Selective GeOx Reduction-Reference-Cited by-同舟云学术

Engineering High-k/SiGe Interface with ALD Oxide for Selective GeOx Reduction

Published:2019-04-02 Issue:16 Volume:11 Page:15111-15121
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kavrik Mahmut S.^ORCID,Ercius Peter¹^ORCID,Cheung Joanna,Tang Kechao²^ORCID,Wang Qingxiao³,Fruhberger Bernd,Kim Moon³,Taur Yuan,McIntyre Paul C.²,Kummel Andrew C.^ORCID

Affiliation:

1. National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

2. Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

3. Material Science and Engineering, University of Texas, Dallas, Texas 75080-3021, United States

Funder

Taiwan Semiconductor Manufacturing Company

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b22362

Reference25 articles.

1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

2. (Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations

3. Structural and dielectric properties of amorphousZrO2andHfO2

4. ITRS 2.0. International Technology Roadmap for Semiconductors 2.0, 2015.

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