1. Stacked Nanosheet Gate-All-Around Transistor to Enable Scaling beyond FinFET, 2017 Symposium on VLSI Technology;Loubet,2017
2. Vertically Stacked Gate-All-Around Si Nanowire Transistors: Key Process Optimizations and Ring Oscillator Demonstration;Mertens,2017
3. 3nm GAA Technology Featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications, 2018 IEEE International Electron Devices Meeting (IEDM);Bae,2018
4. 7-Levels-Stacked nanosheet GAA transistors for high performance computing;Barraud,2020
5. Vertically stacked gate-all-around Si nanowire CMOS transistors with reduced vertical nanowires separation, new work function metal gate solutions, and DC/AC performance optimization;Ritzenthaler,2018