Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates
Author:
Affiliation:
1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b12376
Reference33 articles.
1. Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory
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3. Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention
4. Printed, Flexible, Organic Nano-Floating-Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics
5. Solution-Processable Low-Voltage and Flexible Floating-Gate Memories Based on an n-Type Polymer Semiconductor and High-k Polymer Gate Dielectrics
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