Solution-Processable Low-Voltage and Flexible Floating-Gate Memories Based on an n-Type Polymer Semiconductor and High-k Polymer Gate Dielectrics
Author:
Affiliation:
1. Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
2. Faculty of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Funder
National Natural Science Foundation of China
Research Grants Council, University Grants Committee, Hong Kong
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am5028007
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