High-Speed, Low-Voltage Programmable/Erasable Flexible Two-Bit Organic Transistor Nonvolatile Memories Based on Ultraviolet-Ozone Treated Terpolymer Ferroelectric Gate
Author:
Affiliation:
1. College of Electronic Science and Engineering, Jilin University, Changchun, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10415514/10335711.pdf?arnumber=10335711
Reference33 articles.
1. Towards the Development of Flexible Non-Volatile Memories
2. Nanostructured materials for non-volatile organic transistor memory applications
3. Recent Process of Flexible Transistor‐Structured Memory
4. Controlled Ambipolar Charge Transport Through a Self-Assembled Gold Nanoparticle Monolayer
5. High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor
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