High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures-Reference-Cited by-同舟云学术

High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qian Yangzhou¹,Li Jiayu¹²,Li Wen¹^ORCID,Song Ziyi¹,Yu Hao¹,Feng Ziyi¹,Shi Wei³,Huang Wei³,Yi Mingdong¹^ORCID

Affiliation:

1. State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, China

2. College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, China

3. Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing, 211816, China

Abstract

A multilevel organic field-effect transistor memory based on organic heterostructures is demonstrated. Benefiting from the charge trapping of the quantum well-like heterostructures, the memory exhibited multilevel nonvolatile memory properties.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02842B

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