Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention-Reference-Cited by-同舟云学术

Anodized Aluminum Oxide Thin Films for Room-Temperature-Processed, Flexible, Low-Voltage Organic Non-Volatile Memory Elements with Excellent Charge Retention

Published:2011-09-29 Issue:42 Volume:23 Page:4892-4896
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kaltenbrunner Martin,Stadler Philipp,Schwödiauer Reinhard,Hassel Achim Walter,Sariciftci Niyazi Serdar,Bauer Siegfried

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference50 articles.

1. Organic thin-film transistors

2. High-Performance Organic Field-Effect Transistors

3. Molecular Self-Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin-Film Transistor Applications

4. Device Physics of Solution-Processed Organic Field-Effect Transistors

5. Active-Matrix Displays Driven by Solution-Processed Polymeric Transistors

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