MoS2–Titanium Contact Interface Reactions
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
Funder
Defense Advanced Research Projects Agency
Microelectronics Advanced Research Corporation
Division of Electrical, Communications and Cyber Systems
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b00275
Reference46 articles.
1. Single-layer MoS2 transistors
2. Metal contacts to MoS2: A two-dimensional semiconductor
3. High Performance Multilayer MoS2 Transistors with Scandium Contacts
4. Channel Length Scaling of MoS2MOSFETs
5. Defect-Dominated Doping and Contact Resistance in MoS2
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