Channel Length Scaling of MoS2MOSFETs
Author:
Affiliation:
1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906, United States
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn303513c
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1. Nanometre-scale electronics with III–V compound semiconductors
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3. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
4. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
5. Two-dimensional gas of massless Dirac fermions in graphene
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