Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires-Reference-Cited by-同舟云学术

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Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Published:2016-03-24 Issue:4 Volume:16 Page:2478-2484
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Fu Mengqi¹,Tang Zhiqiang¹,Li Xing¹,Ning Zhiyuan¹,Pan Dong²,Zhao Jianhua²,Wei Xianlong¹,Chen Qing¹

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b00045

Reference40 articles.

1. High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

2. Vertical III–V Nanowire Device Integration on Si(100)

3. Ge/Si nanowire heterostructures as high-performance field-effect transistors

4. High Performance Silicon Nanowire Field Effect Transistors

5. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

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1. Tunable surface band bending enables switchable photoconductance of colloidal InSb nanowires for self-powered and broadband photodetectors with fast response;Applied Surface Science;2024-10

2. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation;Nanotechnology;2023-03-14

3. Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications;Nanoscale;2023

4. InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection;Nanoscale;2023

5. In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices;Chinese Physics Letters;2022-04-01

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