InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection-Reference-Cited by-同舟云学术

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

Published:2023 Issue:23 Volume:15 Page:10033-10041
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Ziyuan¹²³^ORCID,Azimi Zahra¹²^ORCID,Li Zhe¹,Yu Yang¹²,Huang Longsibo¹²,Jin Weiqi³,Tan Hark Hoe¹²,Jagadish Chennupati¹²,Wong-Leung Jennifer¹^ORCID,Fu Lan¹²^ORCID

Affiliation:

1. Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia

2. Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia

3. MoE Key Lab of Photoelectronic Imaging Technology and System, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

Abstract

Wurtzite dominant InAs nanowire arrays with a low density of stacking faults were grown by using selective area metal–organic vapour-phase epitaxy, for the demonstration of high-performance short- and mid-wave infrared photodetector applications.

Funder

Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00340J

Reference51 articles.

1. A review of III–V nanowire infrared photodetectors and sensors

2. Synthesis and Applications of III–V Nanowires

3. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions