Author:
Pan Dong,Song Huading,Zhang Shan,Liu Lei,Wen Lianjun,Liao Dunyuan,Zhuo Ran,Wang Zhichuan,Zhang Zitong,Yang Shuai,Ying Jianghua,Miao Wentao,Shang Runan,Zhang Hao,Zhao Jianhua
Abstract
We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter (∼30 nm) is much thinner than before (∼100 nm). The ultra-thin InAs nanowires are pure phase crystals for various different growth directions. Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and 2e-periodic Coulomb blockade at zero magnetic field, a necessary step for future Majorana experiments. By reducing wire diameter, our work presents a promising route for reaching fewer sub-band regime in Majorana nanowire devices.
Subject
General Physics and Astronomy
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献