Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications-Reference-Cited by-同舟云学术

Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications

Published:2023 Issue:7 Volume:15 Page:3032-3050
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yan Xin¹^ORCID,Liu Yuqing¹,Zha Chaofei¹²,Zhang Xia¹,Zhang Yunyan²,Ren Xiaomin¹

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China

Abstract

This review paper provides an overview of the growth, properties, and applications of non-〈111〉-oriented semiconductor nanowires for future electronic and optoelectronic devices.

Funder

State Key Laboratory of Information Photonics and Optical Communications

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR06421A

Reference213 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Quantum size microcrystals grown using organometallic vapor phase epitaxy

3. Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers

4. Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type

5. GaAs free‐standing quantum‐size wires

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