Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core–Shell Nanowires-Reference-Cited by-同舟云学术

Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core–Shell Nanowires

Published:2019-09-17 Issue:12 Volume:19 Page:8510-8518
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Matsuda Teruyoshi¹,Takada Kyohei¹,Yano Kohsuke¹,Tsutsumi Rikuo¹,Yoshikawa Kohei¹,Shimomura Satoshi¹,Shimizu Yumiko²,Nagashima Kazuki³^ORCID,Yanagida Takeshi³^ORCID,Ishikawa Fumitaro¹^ORCID

Affiliation:

1. Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan

2. Toray Research Center, 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan

3. Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b02932

Reference45 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. RETRACTED ARTICLE: Quantized Majorana conductance

3. Novel Compound Semiconductor Nanowires

4. Epitaxial III−V Nanowires on Silicon

5. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

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