Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Funder
The Research Grants Council of Hong Kong
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913432
Reference10 articles.
1. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping
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4. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices
5. Improvements in epitaxial lateral overgrowth of InP by MOVPE
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