Author:
Jansson M.,Nosenko V. V.,Rudko G. Yu,Ishikawa F.,Chen W. M.,Buyanova I. A.
Abstract
AbstractGaAsBi nanowires represent a novel and promising material platform for future nano-photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a challenge due to a large miscibility gap between GaAs and GaBi. In this work we investigate effects of Bi incorporation on lattice dynamics and carrier recombination processes in GaAs/GaAsBi core/shell nanowires grown by molecular-beam epitaxy. By employing photoluminescence (PL), PL excitation, and Raman scattering spectroscopies complemented by scanning electron microscopy, we show that increasing Bi-beam equivalent pressure (BEP) during the growth does not necessarily result in a higher alloy composition but largely affects the carrier localization in GaAsBi. Specifically, it is found that under high BEP, bismuth tends either to be expelled from a nanowire shell towards its surface or to form larger clusters within the GaAsBi shell. Due to these two processes the bandgap of the Bi-containing shell remains practically independent of the Bi BEP, while the emission spectra of the NWs experience a significant red shift under increased Bi supply as a result of the localization effect.
Funder
Swedish Foundation for Strategic Research
KAKENHI from Japan Society for the Promotion of Science
Swedish Foundation for International Cooperation in Research and Higher Education
Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University
Swedish Research Council
Linköping University
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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