High verticality vapor–liquid–solid growth of GaAs<sub>0.99</sub>Bi<sub>0.01</sub> nanowires using Ga–Bi assisted catalytic droplets-Reference-Cited by-同舟云学术

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High verticality vapor–liquid–solid growth of GaAs_0.99Bi_0.01 nanowires using Ga–Bi assisted catalytic droplets

Published:2024 Issue:3 Volume:6 Page:846-854
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Himwas Chalermchai¹^ORCID,Yordsri Visittapong²,Thanachayanont Chanchana²,Chomdech Saharat¹^ORCID,Pumee Wenich¹,Panyakeow Somsak¹,Kanjanachuchai Songphol¹^ORCID

Affiliation:

1. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand

2. National Metal and Materials Technology Center, Thailand Science Park, 114 Paholyothin Rd, Klong 1, Klong Luang, Pathumthani 12120, Thailand

Abstract

GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near- and mid-infrared wavelengths due to the optical properties of the Bi-containing compound and the nanowire structure benefits.

Funder

Chulalongkorn University

National Research Council of Thailand

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NA/D3NA00428G

Reference44 articles.

1. Molecular beam epitaxy growth of GaAs1−xBix

2. Band gap of GaAs1−xBix, 0

3. Valence band anticrossing in GaBixAs1−x

4. Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs

5. Valence-band anticrossing in mismatched III-V semiconductor alloys

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