Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length-Reference-Cited by-同舟云学术

Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length

Author:

Pitner Gregory^ORCID,Hills Gage,Llinas Juan Pablo¹,Persson Karl-Magnus,Park Rebecca^ORCID,Bokor Jeffrey¹,Mitra Subhasish,Wong H.-S. Philip

Affiliation:

1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

Funder

University of California Berkeley

Defense Advanced Research Projects Agency

Office of Naval Research

Division of Electrical, Communications and Cyber Systems

National Science Foundation

Stanford SystemX Alliance

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference33 articles.

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