Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping-Reference-Cited by-同舟云学术

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Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Published:2023-12-09 Issue: Volume:13 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Safron Nathaniel¹,Chiu Hsin-Yuan²,Chao Tzu-Ang²,Su Sheng-Kai²,Passlack Matthias¹,Chiu Kuang-Hsiang³,Chen Chien-Wei⁴,Kei Chi-Chung⁴,Chou Chen-Han³,Lee Tsung-En²,Wang Jer-Fu²,Chang Chih-Sheng²,Liew San-Lin²,Hou Vincent D- H.²,Wang Han¹,Chang Wen-Hao⁵,Wong H.-S. Philip²,Pitner Gregory¹,Chien Chao-Hsin³,Radu Iuliana P.²

Affiliation:

1. Taiwan Semiconductor Manufacturing Company,San Jose,CA,USA

2. Taiwan Semiconductor Manufacturing Company,Hsinchu,Taiwan

3. National Yang Ming Chiao Tung University,Institute of Electronics,Hsinchu,Taiwan

4. National Applied Research Laboratories,Taiwan Instrument Research Institute,Hsinchu,Taiwan

5. National Yang Ming Chiao Tung University,Department of Electrophysics,Hsinchu,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413771.pdf?arnumber=10413771

Reference11 articles.

1. VLSI 85: VLSI design of digital systems

2. VLSI'87: VLSI design of digital systems

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