III–V Nanowire Complementary Metal–Oxide Semiconductor Transistors Monolithically Integrated on Si
Author:
Affiliation:
1. Electrical and Information Technology, Lund University, Box 118, 221 00 Lund, Sweden
2. Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
Funder
Vetenskapsrådet
Stiftelsen för Strategisk Forskning
Seventh Framework Programme
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02936
Reference32 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$
3. Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
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