Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$V_{\rm DD}=0.5~{\rm V}$ </tex-math></inline-formula>-Reference-Cited by-同舟云学术

Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$

Published:2014-06 Issue:6 Volume:35 Page:621-623
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Funder

Semiconductor Research Corporation through the Nonclassical CMOS Research Center

Materials Research Science and Engineering Centers Program of the National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6819100/06805175.pdf?arnumber=6805175

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