Alkoxysilane Layers Compatible with Copper Deposition for Advanced Semiconductor Device Applications
Author:
Affiliation:
1. CEA, LETI, MINATEC, F38054 Grenoble, France
2. 31 Degrees, 20 place Prax-Paris, 82000 Montauban, France
3. Institut Laue-Langevin, Large Scale Structure, 6 rue Jules Horowitz, BP 156 - 38042 Grenoble Cedex 9, France
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/la904771s
Reference34 articles.
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5. Micropatterning of Copper on a Poly(ethylene terephthalate) Substrate Modified with a Self-Assembled Monolayer
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1. Nucleation Behavior of SnS2 on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition;Advanced Materials Interfaces;2024-07-31
2. Impact of Silica Surface Nanoconfinement on the Microstructure of Alkoxysilane Layers Grafted by Supercritical Carbon Dioxide;The Journal of Physical Chemistry C;2019-04-12
3. Surface Properties of Alkoxysilane Layers Grafted in Supercritical Carbon Dioxide;Langmuir;2019-01-18
4. A Vapor Phase Self-Assembly of Porphyrin Monolayer as a Copper Diffusion Barrier for Back-End-of-Line CMOS Technologies;IEEE Transactions on Electron Devices;2016-05
5. Enhancement of Seeding and Electroless Cu Plating on TaN Barrier Layers: The Role of Plasma Functionalized Self-Assembled Monolayers;Journal of The Electrochemical Society;2016
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